1N4006G المضاربه : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop

1N4006G مماثلة

1N4001G
- 50V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4001GL
- 50V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4001L
- 50V; 1.0A rectifier; high current capability and low forward voltage drop
1N4002
- 100V; 1.0A rectifier; high current capability and low forward voltage drop
1N4002G
- 100V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4002L
- 100V; 1.0A rectifier; high current capability and low forward voltage drop
1N4003G
- 200V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
1N4003GL
- 200V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop

1N4006G Datasheet والمضاربه

الصانع : Diodes

التعبءه :

دبابيس : 2

درجة الحراره : دقيقة -65 °C | الاقصى 150 °C

حجم : 65 KB

التطبيق : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop