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W4SRD0R-0D00 مماثلة

  • W4SRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4SRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4SRD0R-0D00 Datasheet والمضاربه

الصانع : Cree 

التعبءه :  

دبابيس : 0 

درجة الحراره : دقيقة 0 °C | الاقصى 0 °C

حجم : 306 KB

التطبيق : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4SRD0R-0D00 تحميل PDF