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54S416T-6 مماثلة

  • 54S416T-5
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
  • 54S416T-6
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
  • 54S416T-7
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA

54S416T-6 Datasheet والمضاربه

الصانع : Ceramate 

التعبءه : TSOP 

دبابيس : 54 

درجة الحراره : دقيقة 0 °C | الاقصى 70 °C

حجم : 1126 KB

التطبيق : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA 

54S416T-6 تحميل PDF