BS62LV8003EC المضاربه : 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit

BS62LV8003EC مماثلة

BS62LV1025PC
- 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 128K x 8bit
BS62LV1023PI
- 70ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 128K x 8bit
BS62LV1024TC
- 70ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 128K x 8bit
BS62LV4001PI
- 70/100ns 20-45mA 2.4-5.5V low power/voltage CMOS SRAM 512K x 8bit
BS62LV4000TI
- 70/100ns 20mA 2.7-3.6V very low power/voltage CMOS SRAM 512K x 8bit
BS62LV2001DC
- 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 256K x 8bit
BS62LV1025PI
- 55/70ns 35mA 4.5-5.5V very low power/voltage CMOS SRAM 128K x 8bit
BS62LV256JI
- 70/100ns 20-35mA 2.4-5.5V very low power/voltage CMOS SRAM 32K x 8bit

BS62LV8003EC Datasheet والمضاربه

الصانع : BSI

التعبءه : TSOP

دبابيس : 44

درجة الحراره : دقيقة 0 °C | الاقصى 70 °C

حجم : 238 KB

التطبيق : 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 1M x 8bit