BS616LV2010EC المضاربه : 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit

BS616LV2010EC مماثلة

BS616LV2020DI
- 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable
BS616LV4011BC
- 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit
BS616LV4020AC
- 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS616LV2012DI
- 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit
BS616UV1620BI
- 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable
BS616LV4023BI
- 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS616LV8013BC
- 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit
BS616UV1010AC
- 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit

BS616LV2010EC Datasheet والمضاربه

الصانع : BSI

التعبءه : TSOP

دبابيس : 44

درجة الحراره : دقيقة 0 °C | الاقصى 70 °C

حجم : 214 KB

التطبيق : 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit