| جزء لا | الصانع | التطبيق |
|---|
| 303UA160P3 | IR | Standard recovery diode |
| IRFI740G | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.4 A |
| IRG4BC10SD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
| IRFU2407 | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.026 Ohm, ID = 42A |
| ST3230C14R2 | IR | Phase control thyristor |
| ST2100C34R3L | IR | Phase control thyristor |
| ST303C04HK2L | IR | Inverter grade thyristor |
| IRU1206-25CY | IR | 1A very low dropout positive fixed 2.5V regulator |
| SD600N12PSC | IR | Standard recovery diode |
| SD263C36S50L | IR | Fast recovery diode |
| IRFU2605 | IR | HEXFET power MOSFET |
| 303URA200 | IR | Standard recovery diode |
| IRF634NL | IR | Power MOSFET, 250V, 8A |
| SD250OC25K | IR | Standard recovery diode |
| SD300R16MV | IR | Standard recovery diode |
| 303URA120 | IR | Standard recovery diode |
| 307U200 | IR | Standard recovery diode |
| SD253R16S20MSV | IR | Fast recovery diode |
| SD253N12S20MV | IR | Fast recovery diode |
| ST303S12MFN0L | IR | Inverter grade thyristor |
| SD200R25MSC | IR | Standard recovery diode |
| IRF5851 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch) |
| ST180C12C2L | IR | Phase control thyristor |
| SD103R10S20PBC | IR | Fast recovery diode |
| IRF3205S | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A |
| IRU1030CM | IR | 3A low dropout positive adjustable regulator |
| SD150N12MC | IR | Standard recovery diode |
| SD400N20MSC | IR | Standard recovery diode |
| SD203N08S10MSC | IR | Fast recovery diode |
| IRFIBC40GLC | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A |
