| جزء لا | الصانع | التطبيق |
|---|
| P5274-01 | Hamamatsu | Allowable current20mA; MCT photoconductive detector dewar type detector with high sensitivity and high-speed response in long wavelength range |
| P7163 | Hamamatsu | 0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector |
| E1168-20 | Hamamatsu | Max voltage2.3kV; diameter 6.15mm; housing, power and singal cables, connector adapter |
| L8933-41 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| P1201-01 | Hamamatsu | Supply voltage100Vdc; 70mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application |
| L7551-22 | Hamamatsu | 2V; 0.2mW; laser diode repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
| R8520-00-C12 | Hamamatsu | Spectral responce300-650nm; between anode and cathode1000Vdc; 0.1mA; position sensitive photomultiplier tube |
| L6303 | Hamamatsu | 30W; L2D2 lamps deuterium lamp |
| R5900U-00-M4 | Hamamatsu | Spectral responce300-650nm; between anode and cathode900Vdc; 0.1mA; multianode photomultiplier tube |
| P1082-03 | Hamamatsu | Supply voltage100Vdc; 70mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application |
| B7506-01 | Hamamatsu | Active area size4.6mm; extended input voltage+-15V; infrared detector mudule with preamp non-cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection |
| H8711 | Hamamatsu | Spectral responce300 to 650nm; supplu voltage 1000V; multianode photomultiplier tube assembly |
| L8933-04 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| H7827-002 | Hamamatsu | Input voltage 11.5-15.5V; max input current40mA; compact head-on PMT photosensor module |
| E1168-17 | Hamamatsu | Max voltage2.3kV; diameter 6.2mm; housing, power and singal cables, connector adapter |
| C7884-21 | Hamamatsu | Supply voltage +-12/+-15V; driver circuit for NMOS linear image sensor |
| C9068 | Hamamatsu | Supply voltage +18V; PSD signal processing circuit digital output for connection with PC |
| C4710-51 | Hamamatsu | InputV +12V; 120mA; high voltage power supply unit |
| H7732P-10 | Hamamatsu | Input voltage 11.5-15.5V; max input current40mA; compact side-on PMT photosensor module |
| L5431 | Hamamatsu | 575W; metal halide lamp short-arc type |
| C5964-0800 | Hamamatsu | Pixel size50(H) x 2500(V); number of pixels256; supply voltage -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor |
| L7296-50 | Hamamatsu | 30W; L2D2 lamps deuterium lamp |
| C4710-50 | Hamamatsu | InputV +15V; 95mA; high voltage power supply unit |
| C2719 | Hamamatsu | Supply voltage+-9V; current-to-voltage conversion photosensor amplifier for weak photocurrent with low noise |
| P4245 | Hamamatsu | Active area size3x3mm; extended input voltage+-15V; infrared detector mudule with preamp non-cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection |
| P6606-110 | Hamamatsu | Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements |
| P3872 | Hamamatsu | Supply voltage400Vdc; 300mW; CdS photoconductive cell hermetically sealed for high reliability |
| C2281 | Hamamatsu | Supply voltage+-9V; Si photodiode with BNC connector |
| G1740 | Hamamatsu | Active area size5.7x5.6mm; reverse voltage5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification |
| R3991 | Hamamatsu | Spectral responce300-650nm; between anode and cathode1800Vdc; 0.02mA; photomultiplier tube |
